Design, fabrication and characterization of n-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC) : double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT) /

Description

Thesis (Ph.D.) -- McMaster University, 1998. / Includes bibliographical references (p. 155-158). Also available via World Wide Web.

Links & Downloads

1. http://libaccess.mcmaster.ca/login?url= http://wwwlib.umi.com/dissertations/fullcit/NQ42767

Tags

Additional Fields

Identifer	oai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/181805883
Date	January 1998
Creators	Tan, Eugene.
Source Sets	OCLC
Language	English
Detected Language	English
Source	*McMaster only