The low frequency noise of metal-semiconductor field-effect transistors (MESFETs) based on
ZnO:Mg thin films grown by pulsed laser deposition on a-plane sapphire was investigated. In order
to distinguish between noise generation in the bulk channel material, at the semiconductor surface,
and at the gate/channel interface, ohmic ZnO channels without gate were investigated in detail,
especially concerning the dependency of the noise on geometrical variations. The experiments
suggest that the dominating 1/f noise in the frequency range below 1 kHz is generated within the
bulk channel material, both for bare ZnO channels and MESFETs.
Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:31224 |
Date | 14 August 2018 |
Creators | Klüpfel, Fabian J., von Wenckstern, Holger, Grundmann, Marius |
Publisher | American Institute of Physics, Universität Leipzig |
Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
Language | English |
Detected Language | English |
Type | info:eu-repo/semantics/publishedVersion, doc-type:article, info:eu-repo/semantics/article, doc-type:Text |
Rights | info:eu-repo/semantics/openAccess |
Relation | 0003-6951, 1077-3118, 033502 |
Page generated in 0.0117 seconds