<p> The Metal-Oxide Semiconductor Field-Effect Transistor is first analyzed from an active R-C transmission line view-point. The small signal circuit model and the noise model of the device are then derived and experimental results presented.</p> <p> A Chronologically arranged bibliography concerning MOS devices and associated noise studies is included at the end of this thesis.</p> / Thesis / Master of Engineering (MEngr)
| Identifer | oai:union.ndltd.org:mcmaster.ca/oai:macsphere.mcmaster.ca:11375/20777 |
| Date | 05 1900 |
| Creators | Yeh, Chuan-Sung |
| Contributors | Chisholm, S. H., Electrical Engineering |
| Source Sets | McMaster University |
| Language | en_US |
| Detected Language | English |
| Type | Thesis |
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