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Electrical and material characteristics of hafnium-based multi-metal high-k gate dielectrics for future scaled CMOS technology: physics, reliability, and process development

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Identiferoai:union.ndltd.org:UTEXAS/oai:repositories.lib.utexas.edu:2152/2287
Date28 August 2008
CreatorsRhee, Se Jong
Source SetsUniversity of Texas
LanguageEnglish
Detected LanguageEnglish
TypeThesis, text
Formatelectronic
RightsCopyright is held by the author. Presentation of this material on the Libraries' web site by University Libraries, The University of Texas at Austin was made possible under a limited license grant from the author who has retained all copyrights in the works.

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