Metal-oxide-semiconductor devices based on epitaxial germanium layers grown selectively directly on silicon substrates by ultra-high-vacuum chemical vapor deposition

Description

Thesis (Ph. D.)--University of Texas at Austin, 2009. / Title from PDF title page (University of Texas Digital Repository, viewed on Sept. 11, 2009). Vita. Includes bibliographical references.

Links & Downloads

1. http://www.lib.utexas.edu/etd/d/2009/donnellyj17008/donnellyj17008.pdf#page=3

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Additional Fields

Identifer	oai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/436305144
Date	January 1900
Creators	Donnelly, Joseph Patrick,
Publisher	[Austin, Tex. : University of Texas,
Source Sets	OCLC
Language	English
Detected Language	English