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p-type semiconducting Cu2O thin films prepared by reactive magnetron sputtering and a study of its properties and application

Polycrystalline p-Cu2O were fabricated by reactive rf magnetron sputtering . we found that The electrical, optical, and crystallographical properties of films were strongly dependent on the deposition condition . Grant size increasing in the range from 10 to 45nm , A hole concentration increasing in the range from 1016 to 1017 cm-3 and a mobility increasing on the order of 10-1 cm2/V s were obtained in the cuprous oxide thin film prepared by controlling work pressure (Argon partial partial pressure ) .
Fabricated thin-film heterojunction diodes consisting of a p-type cuprous oxide combined with and n-type Al-doped ZnO and ITO exhibited a rectifying current-voltage characteristic .

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0706105-123325
Date06 July 2005
CreatorsYang, Shun-jie
ContributorsMing-Chi Jhou, Mau-Phon Houng, ¢Òe-Sin Gan, Bae-Heng Tseng
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706105-123325
Rightscampus_withheld, Copyright information available at source archive

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