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Příprava vrstevnatých struktur technologií PE CVD / Formation of layered structures using PE CVD technique

The work is aimed at preparation and characterization of thin films deposited by Plasma-Enhanced Chemical Vapor Deposition (PE-CVD) on silicon wafers. A comprehensive characterization of the deposition system in order to determine the range of deposition conditions was a part of the study. Subsequently, the single and multi-layers were deposited from tetravinylsilane monomer. The deposition process was monitored by spectroscopic ellipsometry and mass spectroscopy. Layers and layered structures were characterized by microscopic and spectroscopic techniques. The physical and chemical properties of deposited films were studied with respect to the deposition conditions and monomer fragmentation in low-temperature plasma.

Identiferoai:union.ndltd.org:nusl.cz/oai:invenio.nusl.cz:216230
Date January 2008
CreatorsHoferek, Lukáš
ContributorsKrčma, František, Čech, Vladimír
PublisherVysoké učení technické v Brně. Fakulta chemická
Source SetsCzech ETDs
LanguageCzech
Detected LanguageEnglish
Typeinfo:eu-repo/semantics/masterThesis
Rightsinfo:eu-repo/semantics/restrictedAccess

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