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Monte Carlo study of hole transport in bulk silicon, gallium arsenide, gallium nitride and relate device structures

No description available.
Identiferoai:union.ndltd.org:GATECH/oai:smartech.gatech.edu:1853/16712
Date08 1900
CreatorsOg̃uzman, İsmail Hakki
PublisherGeorgia Institute of Technology
Source SetsGeorgia Tech Electronic Thesis and Dissertation Archive
Detected LanguageEnglish
TypeDissertation
RightsAccess restricted to authorized Georgia Tech users only.

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