Silicon carbide (SiC), is a wide band gap (2.4 eV < Eg < 3.3 eV) semiconducting material well known for its potential applications in high-temperature, high-power, high-frequency or hard radiation resistant devices. In this thesis, we are broadening elementary knowledge about this material. We identify energy levels in the material, using Photo-Hall effect spectroscopy supported by the temperature dependency of classic Hall effect measurement and temperature dependent photoluminescence. This knowledge is essential to allow SiC application as a radiation detector.
| Identifer | oai:union.ndltd.org:nusl.cz/oai:invenio.nusl.cz:398638 |
| Date | January 2019 |
| Creators | Zetek, Matyáš |
| Contributors | Belas, Eduard, Hazdra, Pavel |
| Source Sets | Czech ETDs |
| Language | English |
| Detected Language | English |
| Type | info:eu-repo/semantics/masterThesis |
| Rights | info:eu-repo/semantics/restrictedAccess |
Page generated in 1.5339 seconds