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Photoluminescent properties of porous silicon.

by Kan Chi Fai. / Title also in Chinese characters. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1993. / Includes bibliographical references (leaves 120-124). / Acknowledgements / Abstract / Chapter Chapter 1 --- Introduction --- p.1 / Chapter Chapter 2 --- Proposed mechanisms of the visible photoluminescence of porous silicon --- p.5 / Chapter Chapter 3 --- Sample Preparation --- p.15 / Chapter 3.1 --- Anodization of porous silicon in an electrochemical cell --- p.15 / Chapter 3.2 --- Appearances of samples --- p.18 / Chapter 3.3 --- Uniformity of samples --- p.21 / Chapter 3.4 --- Formation mechanism --- p.22 / Chapter 3.5 --- Measurements of current-voltage characteristics --- p.23 / Chapter 3.6 --- Current-Voltage (I-V) Characteristics --- p.24 / Chapter 3.7 --- Voltage monitored at constant anodizing current --- p.37 / Chapter 3.8 --- Mass lost due to anodization --- p.37 / Chapter Chapter 4 --- Transmittance and reflectance studies --- p.42 / Chapter 4.1 --- Transmittance and reflectance studies in the ultraviolet to near infrared range --- p.42 / Chapter 4.1.1 --- Experimental setup of transmittance and reflectance spectroscopic studies --- p.42 / Chapter 4.1.2 --- Transmittance spectra --- p.42 / Chapter 4.1.3 --- Reflectance spectra --- p.48 / Chapter 4.1.4 --- Optical thickness of the porous silicon layer --- p.60 / Chapter 4.1.5 --- Effective medium approximation --- p.61 / Chapter 4.1.6 --- "Determination of refractive index, porosity and thickness" --- p.66 / Chapter 4.1.7 --- Thickness measured by optical microscopy --- p.67 / Chapter 4.1.8 --- Validity of the effective medium approximation --- p.72 / Chapter 4.2 --- Infrared transmission studies --- p.76 / Chapter 4.2.1 --- Experimental setup --- p.76 / Chapter 4.2.2 --- Infrared spectra --- p.75 / Chapter Chapter 5 --- Photoluminescence and Photoexcitation --- p.82 / Chapter 5.1 --- Photoluminescence studies --- p.82 / Chapter 5.1.1 --- Experimental setup --- p.82 / Chapter 5.1.2 --- Calibration of the spectral response of setup --- p.84 / Chapter 5.1.3 --- The photoluminescence and the appearance of porous silicon --- p.88 / Chapter 5.1.4 --- Effect of laser radiation on porous silicon --- p.95 / Chapter 5.1.5 --- Photochemistry --- p.95 / Chapter 5.1.6 --- Aging and photoluminescence --- p.97 / Chapter 5.1.7 --- Annealing studies of porous silicon --- p.97 / Chapter 5.1.8 --- Photoluminescence spectra --- p.100 / Chapter 5.1.9 --- Interference --- p.106 / Chapter 5.2 --- Photoexcitation studies --- p.107 / Chapter 5.2.1 --- Experimental setup --- p.107 / Chapter 5.2.2 --- Result --- p.108 / Chapter Chapter 6 --- Discussions and conclusions --- p.112 / Chapter 6.1 --- Information from peer groups --- p.112 / Chapter 6.1.1 --- Raman scattering --- p.112 / Chapter 6.1.2 --- X-ray diffraction --- p.112 / Chapter 6.2 --- Photoluminescence and annealing --- p.113 / Chapter 6.3 --- Photoluminescence and the etching conditions --- p.114 / Chapter 6.4 --- Consideration of different models in the visible photoluminescence of porous silicon --- p.117 / Chapter 6.5 --- Conclusions --- p.118 / References --- p.120

Identiferoai:union.ndltd.org:cuhk.edu.hk/oai:cuhk-dr:cuhk_319138
Date January 1993
ContributorsKan, Chi Fai., Chinese University of Hong Kong Graduate School. Division of Physics.
PublisherChinese University of Hong Kong
Source SetsThe Chinese University of Hong Kong
LanguageEnglish
Detected LanguageEnglish
TypeText, bibliography
Formatprint, 124 leaves : ill. (some mounted col.) ; 30 cm.
RightsUse of this resource is governed by the terms and conditions of the Creative Commons “Attribution-NonCommercial-NoDerivatives 4.0 International” License (http://creativecommons.org/licenses/by-nc-nd/4.0/)

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