Abstract
Ridge-type 1.3£gm InGaAsP diode lasers with planar waveguide structure have beem successfully fabricated and mounted on silicon submounds. The laser diodes were fabricated by first etch a ridge structure for light guidance.Typical ridge width is around 3£gm.
After ridge etching, a SiO2 thin film was sputtered onto the sample as surface passivation layer, fllowing by the coating of Benzocyclobutene (BCB) polymer for surface planarization.The unwanted BCB polymer was removed by dry etching process until the passivation oxide can be observed.Before metallization, SiO2 layers above the ridge were removed by wet etching technique. The fabrication was completed by evaporating contact metals to the samples.
The finished samples were cleaved into laser dies with a dimension of 500£gm¡Ñ300£gm.The dies were mounted onto a Si submound for DC and AC measurement.The threshold current of the planarized laser is 34mA.The threshold voltage and total resistance of the planar device are 1.31V and 10.1£[.The quantum efficiency as large as 76¢H is obtained.The frequency response of the device is also measured.The 3dB bandwidth is about 1.9GHz¡C
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0702103-152114 |
| Date | 02 July 2003 |
| Creators | Chen, Yi-Jen |
| Contributors | Yi-Jen Chiu, Ken-Huang Lin, An-Kuo Chu, Ju-Ta Tung |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0702103-152114 |
| Rights | withheld, Copyright information available at source archive |
Page generated in 0.0017 seconds