This thesis deals with the silicon etching technology. It Examines using of water solution of potassium hydroxide. It focuses on plasma etching of silicon using mixture of CF4 and O2 as the dry way of etching. Important parameters of etching like etching rate of silicon and masking materials, etching selectivity, surface roughness and underetching of mask are determined for both ways. Some additional processes has been examined as well, namely creating of mask of resist and silicon dioxide, lithography process and etching of resist using oxygen plasma.
| Identifer | oai:union.ndltd.org:nusl.cz/oai:invenio.nusl.cz:219382 |
| Date | January 2012 |
| Creators | Krátký, Stanislav |
| Contributors | Ježek,, Jan, Matějka, Milan |
| Publisher | Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií |
| Source Sets | Czech ETDs |
| Language | Czech |
| Detected Language | English |
| Type | info:eu-repo/semantics/masterThesis |
| Rights | info:eu-repo/semantics/restrictedAccess |
Page generated in 0.0302 seconds