In this thesis, we propose a simple trench oxide layer polysilicon thin-film Transistor (TO TFT) process and the self-heating effects can be significantly reduced because of its structural advantages. According to the ISE-TCAD simulation results, our proposed TO TFT structure has novel features as follows: 1. The buried oxide and the isolation oxide are carried out simultaneously in order to achieve a goal of simple process. 2. The trench design is used to improve both the sensing current windows (~ 84%) and the retention time (~ 57%). 3. The thermal stability is drastically improved by its naturally formed source/drain tie. The above mentioned features help our proposed device structure to demonstrate the desired characteristics that are better than that of a conventional TFT. Additionally, the thermal instability is drastically improved which is good for long-term device operation.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0729110-143746 |
| Date | 29 July 2010 |
| Creators | Chiu, Hsien-Nan |
| Contributors | Jyi-Tsong Lin, Albert Chin, Wen-Kuan Yeh, Meng-Hsueh Chiang, Yao-Tsong Tsai |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0729110-143746 |
| Rights | not_available, Copyright information available at source archive |
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