Return to search

Slow positron annihilation spectroscopy applied to the analysis of the semiconductor, silicide, and titanium nitride structures

No description available.
Identiferoai:union.ndltd.org:GATECH/oai:smartech.gatech.edu:1853/17298
Date08 1900
CreatorsFrost, Robert Lewis
PublisherGeorgia Institute of Technology
Source SetsGeorgia Tech Electronic Thesis and Dissertation Archive
Detected LanguageEnglish
TypeDissertation
RightsAccess restricted to authorized Georgia Tech users only.

Page generated in 0.0016 seconds