Return to search

Selektivní růst GaN nanostruktur na křemíkových substrátech / Selective growth of GaN nanostructures on silicon substrates

This thesis deals with deposition of gallium nitride thin films on silicon substrates covered by negative HSQ rezist. Rezist was patterned via electron beam lithography to create masks, where the selective growth of crystals was achieved. Growth of GaN layers was carried out by MBE method. For achievement of desired selective growth, the various deposition conditions were studied.

Identiferoai:union.ndltd.org:nusl.cz/oai:invenio.nusl.cz:232076
Date January 2015
CreatorsKnotek, Miroslav
ContributorsNovák, Tomáš, Voborný, Stanislav
PublisherVysoké učení technické v Brně. Fakulta strojního inženýrství
Source SetsCzech ETDs
LanguageCzech
Detected LanguageEnglish
Typeinfo:eu-repo/semantics/masterThesis
Rightsinfo:eu-repo/semantics/restrictedAccess

Page generated in 0.002 seconds