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Carrier Dynamic Study of Oxygen ion-implanted GaAs

In this thesis, a home made chirp-controlled pump-probe measurement system has been developed and is used compare the time-resolved photo-reflectance measurements of GaAs:O with different fabricated condition(2.5¡Ñ10^13 ions/cm^2 (500Kev & 800Kev), 4¡Ñ10^13 ions/cm^2 (1200Kev) and 6¡Ñ10^13 ions/cm^2 (500Kev & 800Kev), 1¡Ñ10^14 ions/cm^2 (1200Kev)).The lower-dose sample were annealed at 0,350,400,450,550 and 600¢J,respectively. The higher-dose sample were annealed at 550¢J.
The chirp-controlled pump-probe measurement system with temporal resolution of around 100 femtosecond and chirp parameter tuning from ¡V539 fs^2 to +663 fs^2 is demonstrated. Meanwhile, using chirp-controlled pump-probe measurement system, ultrafast dynamics of photogenerated carrier in GaAs:O in different chirp by laser pulse is characterized.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0603108-140610
Date03 June 2008
CreatorsHuang, Chun-Kai
ContributorsYi-Jen Chiu, Ann-Kuo Chu, Chao-Kuei Lee
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0603108-140610
Rightsnot_available, Copyright information available at source archive

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