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Impurity-induced resonant Raman scattering in GaAs below the band gap at low temperature

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Identiferoai:union.ndltd.org:uni-goettingen.de/oai:ediss.uni-goettingen.de:11858/00-1735-0000-0022-5D51-1
Date21 June 2000
CreatorsHuang, Qing
ContributorsUlbrich, Rainer G. Prof. Dr.
Source SetsGeorg-August-Universität Göttingen
LanguageEnglish
Detected LanguageEnglish
TypedoctoralThesis

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