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Internal quantum efficiency of polar and non-polar GaN and InN

This thesis discusses the crystal quality and transition of electrons and holes pairs by temperature- and power- dependent Photoluminescence (PL). With the PL spectra, we apply four kinds of Internal Quantum Efficiency (IQE) formulas for c- and m- plane III-nitride and discuss the differences of the four formulas. An analysis of IQE is performed and it is found for m-plane III-nitride being larger than c-plane III-nitride. This result confirms that characteristic m-plane structure can increase its
radiative recombination.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0826109-182301
Date26 August 2009
CreatorsHuang, Pei-lun
ContributorsDer-Jun Jang, Tsu-Chiang Yen, Quark Yung-Sung Chen, Min-Hsiung Tsai, L. W. Tu
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0826109-182301
Rightsnot_available, Copyright information available at source archive

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