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Investigation of£_-doped¢»¡Ð¢½ Semiconductor Quantum Well Using Photoluminescence

We measure the energy gap of two-dimensional electron gas in AlAs0.56Sb0.44/Ga0.47In0.53As at low temperature by photoluminescence measurement. We intend to observe the intersubband transition in these samples, especially the first and second subband. We have discovered that the sample ( AlAs0.56Sb0.44/Ga0.47In0.53As ) has three subband by SdH and electron density will increase with illumination time. Although we did not observe the intersubband transition in the experiment, we did know the performance and controls about TRIAX320 monochrometer. It means we could measure the better result in further.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0706101-155927
Date06 July 2001
CreatorsHong, Jeson
ContributorsIkai Lo, Yan-ten Lu, Li-wei Tu
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706101-155927
Rightsunrestricted, Copyright information available at source archive

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