Bibliography: leaves 156-165. / xvi, 174 leaves : ill. ; 30 cm. / Title page, contents and abstract only. The complete thesis in print form is available from the University Library. / This thesis analyses the design of a Dynamic RAM in gallium arsenide for use as a buffer in an ATM switch. The causes of leakage are investigated and methods to overcome or compensate the leakage are devised, resulting in a memory cell with a large storage time, high speed and low power dissipation. A 14 kbit RAM array is designed and laid out in gallium arsenide. The RAM array is designed to operate over a -25oC to +125oC temperature range using process parameters which vary by up to 2 [sigma] from typical. / Thesis (M.Eng.Sc.)--University of Adelaide, Dept. of Electrical & Electronic Engineering, 1996?
| Identifer | oai:union.ndltd.org:ADTP/260346 |
| Date | January 1995 |
| Creators | McGeever, Michael K. |
| Source Sets | Australiasian Digital Theses Program |
| Language | en_US |
| Detected Language | English |
Page generated in 0.0022 seconds