Junction tuning by ferroelectric switching in silicon nanowire Schottky-barrier field effect transistors

Description

We report on a novel silicon nanowire-based field effect transistor with integrated ferroelectric gate oxide. The concept allows tuning the carrier transport in a non-volatile approach by switching the polarization in the ferroelectric layer close to the source Schottky-junction. We interpret the results in terms of tuning the transmissibility of the Schottky-junction for charge carriers. The experimental results provide a first step towards the integration of memory-in-logic concepts with reconfigurable nanowire transistors.

Links & Downloads

1. urn:nbn:de:bsz:14-qucosa2-768831
2. https://tud.qucosa.de/id/qucosa%3A76883
3. https://tud.qucosa.de/api/qucosa%3A76883/attachment/ATT-0/

Tags

info:eu-repo/classification/ddc/620

ddc:620

Additional Fields

Identifer	oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:76883
Date	07 December 2021
Creators	Sessi, V., Mulaosmanovic, H., Hentschel, R., Pregl, S., Mikolajick, T., Weber, W. M.
Publisher	IEEE
Source Sets	Hochschulschriftenserver (HSSS) der SLUB Dresden
Language	English
Detected Language	English
Type	info:eu-repo/semantics/acceptedVersion, doc-type:conferenceObject, info:eu-repo/semantics/conferenceObject, doc-type:Text
Rights	info:eu-repo/semantics/openAccess
Relation	978-1-5386-5336-4, 10.1109/NANO.2018.8626257