Due to the extreme properties of diamond, such as extreme hardness, high thermal conductivity, high electrical breakdown strength, high electron and hole mobilities and large band gap, it is of interest to study this material in detail. Before advantage can be taken of diamond’s properties for high-temperature, high-power electronic applications successful doping/ion implantation of diamond must be achieved. This requires an understanding of the types of defects produced during ion irradiation. In the present work, type IIa diamond has been irradiated with various doses of 320keV Xe ions at room temperature. Analytical techniques used are electron spin resonance spectroscopy, Raman spectroscopy, transmission electron microscopy and electron energy loss spectroscopy. Previous models have suggested that upon ion impact, amorphous and/or graphitized clusters are formed in diamond, which will overlap at a critical dose to form a semi-continuous graphitized layer. (For complete abstract open document)
| Identifer | oai:union.ndltd.org:ADTP/203969 |
| Creators | Lai, Pooi-Fun |
| Source Sets | Australiasian Digital Theses Program |
| Detected Language | English |
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