Graphene has been considered for a variety of applications including novel nanoelectronic device concepts. However, the deposition of ultra-thin high-k dielectrics on top of graphene has still been challenging due to graphene's lack of dangling bonds. The formation of large islands and leaky films has been observed resulting from a much delayed growth initiation. In order to address this issue, we tested a pre-treatment with NF³ instead of XeF² on CVD graphene as well as epitaxial graphene monolayers prior to the Atomic Layer Deposition (ALD) of Al²O³. All experiments were conducted in vacuo; i. e. the pristine graphene samples were exposed to NF³ in the same reactor immediately before applying 30 (TMA - H²O) ALD cycles and the samples were transferred between the ALD reactor and a surface analysis unit under high vacuum conditions. The ALD growth initiation was observed by in-situ real-time Spectroscopic Ellipsometry (irtSE) with a sampling rate above 1 Hz. The total amount of Al²O³ material deposited by the applied 30 ALD cycles was cross-checked by in-vacuo X-ray Photoelectron Spectroscopy (XPS). The Al²O³ morphology was determined by Atomic Force Microscopy (AFM). The presence of graphene and its defect status was examined by in-vacuo XPS and Raman Spectroscopy before and after the coating procedure, respectively.
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:35188 |
| Date | 06 September 2019 |
| Creators | Junige, Marcel, Oddoy, Tim, Yakimovab, Rositsa, Darakchievab, Vanya, Wenger, Christian, Lupinac, Grzegorz, Kitzmann, Julia, Albert, Matthias, Bartha, Johann W. |
| Publisher | SPIE |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | info:eu-repo/semantics/publishedVersion, doc-type:conferenceObject, info:eu-repo/semantics/conferenceObject, doc-type:Text |
| Rights | info:eu-repo/semantics/openAccess |
| Relation | 10.1117/12.2181242 |
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