In this thesis, the residual stress distribution of metal film sputtered on silicon substrate are studied. The commercial Marc finite element method package is used in this work. The thermal-mechanical model is employed in the residual and thermal stress analysis of thin film during the sputtering process.
Two models finite element are used in this study. One is the 2D axial-symmetric model and the other is the 3D. The 2D axial-symmetric model was employed to investigation the residual stress distribution in 4¡¨, 6¡¦¡¦, and 8¡¦¡¦ wafer during the UBM sputtering process. The 3D model was used to study the effects of sputtering parameters, i.e. sputtering temperature and film thickness, on the residual stress distribution. The effect of etching process on the sputtered film has also been studied by using the 3D model. Results indicate the proposed model can simulate the residual stress distribution successfully.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0721108-152406 |
| Date | 21 July 2008 |
| Creators | Hunag, Tian-yong |
| Contributors | Jao-Hwa Kuang, Yung-Chuan Chen, Der-Min Tsay, Ying-Chien Tsai, Shyh-Chour Huang |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0721108-152406 |
| Rights | campus_withheld, Copyright information available at source archive |
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