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Optical interferometric measurement of in-plane residual stresses in SiO₂ films on silicon substrates

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Identiferoai:union.ndltd.org:GATECH/oai:smartech.gatech.edu:1853/16815
Date08 1900
CreatorsGhaffari, Kasra
PublisherGeorgia Institute of Technology
Source SetsGeorgia Tech Electronic Thesis and Dissertation Archive
Detected LanguageEnglish
TypeDissertation
RightsAccess restricted to authorized Georgia Tech users only.

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