Reconfigurable field effect transistors (RFET) have the ability to toggle polarity between n- and p- conductance at runtime [1], [2]. The here presented multiple independent gate (MIG) RFET expands the device functionality by offering additional logical inputs, valuable for e.g. efficient XOR or majority gate implementations [3], [4] or the here originally presented multiplexer circuit. Moreover,https://inspec.iet.org/ideas/#controlled-terms for the first time with a top-down RFET approach equal ON-currents are obtained for every configuration while requiring only one supply voltage (VDD).
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:76833 |
| Date | 29 November 2021 |
| Creators | Simon, M., Trommer, J., Liang, B., Fischer, D., Baldauf, T., Khan, M. B., Heinzig, A., Knaut, M., Georgiev, Y. M., Erbe, A., Bartha, J. W., Mikolajick, T., Weber, W. M. |
| Publisher | IEEE |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | info:eu-repo/semantics/acceptedVersion, doc-type:conferenceObject, info:eu-repo/semantics/conferenceObject, doc-type:Text |
| Rights | info:eu-repo/semantics/openAccess |
| Relation | 978-1-5386-3027-3, 978-1-5386-3028-0, 10.1109/DRC.2018.8442159 |
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