An experimental and theoretical analysis of the effects of ion bombardment on Schottky diodes is presented. The experimentally observed shifts in diode performance are compared to the conditions of ion exposure. These experiments show that Schottky diodes exposed to ion beams show decreases in effective barrier heights and ideality factors, as well as increased incidence of premature reverse breakdown. The change in barrier height is found to be proportional to the energy of the individual ions and the total number of ions delivered to the surface. A numerical simulation of the damage process and device performance is developed. The model considers only the effect of ion exposure on the potential distribution within the metal-semiconductor junction. Comparison of experimental and modelled barrier shifts shows fair agreement, suggesting that enhancement of tunnelling currents is the dominant mechanism for barrier lowering.
| Identifer | oai:union.ndltd.org:arizona.edu/oai:arizona.openrepository.com:10150/277047 |
| Date | January 1989 |
| Creators | Arnold, John Christopher, 1964- |
| Contributors | Carlile, R. N. |
| Publisher | The University of Arizona. |
| Source Sets | University of Arizona |
| Language | en_US |
| Detected Language | English |
| Type | text, Thesis-Reproduction (electronic) |
| Rights | Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author. |
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