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The Properties of SiC Barrier Diodes Fabricated with Ti Schottky Contacts

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Identiferoai:union.ndltd.org:OhioLink/oai:etd.ohiolink.edu:ysu1495150103584503
Date22 May 2017
CreatorsKundeti, Krishna Chaitanya
PublisherYoungstown State University / OhioLINK
Source SetsOhiolink ETDs
LanguageEnglish
Detected LanguageEnglish
Typetext
Sourcehttp://rave.ohiolink.edu/etdc/view?acc_num=ysu1495150103584503
Rightsunrestricted, This thesis or dissertation is protected by copyright: all rights reserved. It may not be copied or redistributed beyond the terms of applicable copyright laws.

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