Confinement effect on semiconductor nanowires properties.
Alexis Nduwimana
100 pages
Directed by Dr. Mei-Yin Chou
We study the effect of confinement on various properties of semiconductor
nanowires. First, we study the size and direction dependence of the band gap of
germanium nanowires. We use the density functional theory in the local density approximation. Results shows that the band gap decreases with the diameter The susceptibility of these nanowires is also computed. Second, we look at the confinement effect on the piezoelectric coefficients of ZnO and AlN nanowires. The Berry phase method is used. It is found that depending on passivation, thepiezoelectric effect can decrease or increase. Finally, we study the size and direction dependence of the melting temperature of silicon nanowires. We use the molecular dynamics with the Stillinger Weber potential. Results indicate that the melting temperature increases with the nanowire diameter and that it is direction dependent.
| Identifer | oai:union.ndltd.org:GATECH/oai:smartech.gatech.edu:1853/19865 |
| Date | 02 November 2007 |
| Creators | Nduwimana, Alexis |
| Publisher | Georgia Institute of Technology |
| Source Sets | Georgia Tech Electronic Thesis and Dissertation Archive |
| Detected Language | English |
| Type | Dissertation |
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