<p> This work presents theoretical calculations of some of the most important electrical characteristics of thin film, insulator-dominated semiconductor devices. Solutions of prespecified accuracy for an a.c. transmission line model of the semiconductor in such
configurations as the MIS (Metal-Insulator-Semiconductor) structure and the SIS (Semiconductor-Insulator-Semiconductor) structure are given. Together with an accurate solution of the d.c. bias problem, exact C-V (Capacitance-Voltage) and G-V (Conductance-Voltage) characteristics can be found at any frequency. SRH (Shockley-Reed-Hall) impurity centres and surface states have been included in both the d.c. and a.c. solutions. In addition, accurate studies of the low temperature dopant impurity response can be made since the d.c.
solution uses full Fermi integrals over arbitrary densities of states with the impurity dopant band treated like an SRH centre for the a.c. solution.</p> <p> In non-equilibrium situations, such as those which occur with the application of light or carrier injection by tunnelling, the a.c. solution requires active elements in the transmission line model but the transmission line can still be solved to a prespecified accuracy provided an accurate solution of the d.c. bias problem can be found. In this thesis the d.c. solution for the case of light-induced pair
production is considered under the assumption of bulk controlled d.c. quasi Fermi level shifts. Thus the accuracy of the related a.c. conductance and capacitance solutions is dependent on the reliability of this assumption.</p> <p> The detailed treatment of the a.c. admittance of the MIS structure is justified by its technological importance and fundamental insight gained on impurity centre and surface state effects.</p> <p> The other work presented in this thesis is devoted to a study of a new thin film device structure, the SIS diode. First, the a.c. admittance characteristics for the thick insulator case are predicted to a prespecified accuracy. Then a simple treatment for part of the SIS d.c. tunnelling problem is done to qualitatively
predict the effects of such parameters as doping density, temperature and insulator thickness on current-voltage characteristics. Finally, a simple generalization of the a.c. transmission line to include the effects of tunnelling is given which allows accurate solution for the a.c. admittance of tunnelling SIS diodes if the complete d.c. non-equilibrium problem can be accurately solved.</p> <p> Practical application of the thick-insulator SIS diode will undoubtedly stem from its wide range of interesting low and high frequency response characteristics. Among the most interesting of these characteristics is a bell-shaped high frequency C-V response previously unobserved in other two terminal devices.</p> <p> An interesting negative resistance feature, which partly resembles the negative resistance region of the p-n junction tunnel diode, is analyzed for the degenerate SIS p-i-n thin insulator structure. While the thick insulator SIS device has recently been fabricated and the bell-shaped high frequency response experimentally observed, experimental verification of the tunneling characteristics of the SIS diode has as yet not been fully realized.</p> / Thesis / Doctor of Philosophy (PhD)
| Identifer | oai:union.ndltd.org:mcmaster.ca/oai:macsphere.mcmaster.ca:11375/20711 |
| Date | 02 1900 |
| Creators | Temple, Victor Albert Keith |
| Contributors | Shewchun, J., Physics |
| Source Sets | McMaster University |
| Language | en_US |
| Detected Language | English |
| Type | Thesis |
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