<p>GaAs/AlGaAs core-shell nanowires (NWs) were grown on GaAs(111)B substrates by Au-assisted molecular beam epitaxy (MBE) to investigate how different Al compositions in the shell influences the structural and optical properties of the NWs. Investigations with a secondary electron microscope (SEM) revealed that an increase in Al content leads to an increase in radial growth rate and a decrease in the axial growth rate of the AlGaAs shell. Low temperature μ-photoluminescence (PL) measurements showed that there was great improvement in the luminescence for the GaAs/AlGaAs core-shell NWs compared to GaAs NWs without shell.</p>
| Identifer | oai:union.ndltd.org:UPSALLA/oai:DiVA.org:ntnu-10001 |
| Date | January 2009 |
| Creators | Rogstad, Espen |
| Publisher | Norwegian University of Science and Technology, Department of Electronics and Telecommunications, Institutt for elektronikk og telekommunikasjon |
| Source Sets | DiVA Archive at Upsalla University |
| Language | English |
| Detected Language | English |
| Type | Student thesis, text |
Page generated in 0.0078 seconds