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Water-assisted Liquid Phase Deposited Fluorinated Silicon Oxide on Amorphous Silicon

In this study, SiO2-xFx films were deposited on Si and amorphous silicon, their physical and chemical properties were measured. An Al/ SiO2-xFx /Si and Al/ SiO2-xFx/a-Si/Si MOS structures were used for the electrical measurements. To improve the electrical properties, we investigated the characteristics of SiO2-xFx films after annealing in nitrogen and oxygen ambient.
We can find the leakage current density can be reduced to about 1.09¡Ñ 10-6 A/cm2 and 1.03¡Ñ 10-7 at -1 MV/cm and at 1 MV/cm after annealing in oxygen ambient. Although the leakage current is improved one order but the dielectric constant is increase.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0812108-141338
Date12 August 2008
CreatorsChia, Chun-Wei
ContributorsWen-Tai Lin, Ying-Lang Wang, Ming-Kwei Lee, Gong Jeng, Ikai Lo
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0812108-141338
Rightsoff_campus_withheld, Copyright information available at source archive

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