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Growth modification and characterization of silicon based materials.

by Cheung Wing-yiu. / Thesis (Ph.D.)--Chinese University of Hong Kong, 1995. / Includes bibliographical references (leaves [170-185]). / ACKNOWLEDGMENT --- p.I / abstract --- p.II / contents --- p.IV / figure captions --- p.C-1 / table captions --- p.C-10 / photo captions --- p.C-11 / Chapter CHAPTER 1 --- INTRODUCTION --- p.1 / Chapter 1.1 --- Novel Silicon-Based Materials Structures - Background and Perspectives --- p.2 / Chapter 1.2 --- Light Emission from Porous Silicon --- p.3 / Chapter 1.2.1 --- Quantum size effect --- p.7 / Chapter 1.2.2 --- Chemical luminescence model --- p.9 / Chapter 1.3 --- Germanium Silicon Alloy --- p.11 / Chapter 1.3.1 --- Formation of germanium silicon alloy by ion implantation --- p.16 / Chapter 1.4 --- Scope of this Work --- p.19 / Chapter CHAPTER 2 --- EXPERIMENTAL METHODS --- p.20 / Chapter 2.1 --- Preparation of Porous Silicon Layers --- p.20 / Chapter 2.1.1 --- Anodization --- p.21 / Chapter 2.1.2 --- Post - anodization treatments --- p.25 / Chapter 2.2 --- Preparation of Germanium Silicon Alloy --- p.27 / Chapter 2.2.1 --- Ion implantation --- p.27 / Chapter 2.2.2 --- Thermal treatment --- p.27 / Chapter 2.3 --- Characterization Methods --- p.28 / Chapter 2.3.1 --- Microscopy studies --- p.28 / Chapter 2.3.2 --- Structural studies --- p.30 / Chapter 2.3.3 --- Compositional studies --- p.31 / Chapter 2.3.4 --- Electron spin resonance --- p.32 / Chapter 2.3.5 --- Optical methods --- p.36 / Chapter 2.3.6 --- Electrical measurements --- p.38 / Chapter 2.3.6.1 --- Spreading resistance profiling --- p.38 / Chapter 2.3.6.2 --- Other electrical measurements --- p.40 / Chapter CHAPTER 3 --- POROUS SILICON - RESULTS --- p.41 / Chapter 3.1 --- General observation of on the Appearance of Samples --- p.41 / Chapter 3.2 --- Formation Current Voltage Characteristics --- p.41 / Chapter 3.3 --- Surface Morphology --- p.52 / Chapter 3.4 --- Electron Spin Resonance --- p.56 / Chapter 3.5 --- Composition Characteristics --- p.68 / Chapter 3.6 --- Optical Characteristics --- p.72 / Chapter 3.6.1 --- Infra-red transmittance studies --- p.72 / Chapter 3.6.2 --- Photoluminescence --- p.74 / Chapter 3.7 --- Electrical Properties --- p.82 / Chapter CHAPTER 4 --- POROUS SILICON - DISCUSSION --- p.84 / Chapter 4.1 --- Formation Properties --- p.84 / Chapter 4.2 --- Structural Properties --- p.87 / Chapter 4.3 --- Paramagnetic Centres in Porous Silicon --- p.88 / Chapter 4.4 --- Compositional Properties --- p.93 / Chapter 4.5 --- Photoluminescence --- p.95 / Chapter 4.6 --- Electrical Properties --- p.105 / Chapter 4.7 --- Summary --- p.106 / Chapter CHAPTER 5 --- GERMANIUM SILICON ALLOY - RESULTS --- p.108 / Chapter 5.1 --- Structural Characteristics --- p.108 / Chapter 5.1.1 --- Defect structure --- p.109 / Chapter 5.1.2 --- Crystal structure --- p.115 / Chapter 5.2 --- Optical Characteristics --- p.127 / Chapter 5.3 --- Electrical characteristics --- p.129 / Chapter 5.3.1 --- Spreading resistance profiling --- p.129 / Chapter 5.3.2 --- Other electrical measurements --- p.138 / Chapter CHAPTER 6 --- GERMANIUM SILICON ALLOY - DISCUSSION --- p.142 / Chapter 6.1 --- Structure Analysis --- p.142 / Chapter 6.2 --- Optical Properties --- p.146 / Chapter 6.3 --- Electrical Properties --- p.147 / Chapter 6.4 --- Summary --- p.150 / Chapter CHAPTER 7 --- CONCLUSIONS --- p.152 / Chapter 7.1 --- Porous Silicon --- p.152 / Chapter 7.2 --- Germanium Silicon Alloys --- p.154 / Chapter CHAPTER 8 --- FURTHER WORK --- p.156 / Chapter 8.1 --- Porous Silicon --- p.156 / Chapter 8.2 --- Germanium Silicon Alloys --- p.156 / APPENDIX / Chapter I --- SPECTRA OF GERMANIUM SILICON ALLOY --- p.A1 / Chapter 1.1 --- Rutherford Backscattering Spectra --- p.A2 / Chapter 1.2 --- Spreading Resistance Depth Profile --- p.A8 / Chapter II --- PUBLICATIONS --- p.A14 / BIBLIOGRAPHY --- p.A15

Identiferoai:union.ndltd.org:cuhk.edu.hk/oai:cuhk-dr:cuhk_318326
Date January 1995
ContributorsCheung, Wing-yiu., Chinese University of Hong Kong Graduate School. Division of Electronic Engineering.
PublisherChinese University of Hong Kong
Source SetsThe Chinese University of Hong Kong
LanguageEnglish
Detected LanguageEnglish
TypeText, bibliography
Formatprint, vi, 157, [28] leaves : ill (some mounted) ; 30cm.
RightsUse of this resource is governed by the terms and conditions of the Creative Commons “Attribution-NonCommercial-NoDerivatives 4.0 International” License (http://creativecommons.org/licenses/by-nc-nd/4.0/)

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