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Low-temperature halo-carbon homoepitaxial growth of 4H-SiC

Thesis (Ph.D.)--Mississippi State University. Department of Electrical and Computer Engineering. / Title from title screen. Includes bibliographical references.

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/609649686
Date January 2008
CreatorsLin, Huang-De Hennessy,
PublisherMississippi State : Mississippi State University,
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish
TypeElectronic resources. Electronic theses/dissertations. Dissertations.

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