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Alternative growth and interface passivation techniques for SiO2 on 4H-SiC

Thesis (Ph. D.)--Auburn University. / Abstract. Vita. Includes bibliographical references (p. 213-225).

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/320908441
Date January 2008
CreatorsZhu, Xingguang, Williams, John R.,
PublisherAuburn, Ala.,
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish

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