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Low-k SiCxNy Etch-Stop/Diffusion Barrier Films for Back-End Interconnect Applications

Lower k and low-leakage silicon carbonitride (SiCxNy ) films were fabricated using single precursor by using radio-frequency (RF) plasma-enhanced chemical vapor deposition (PECVD). We explored precursors with (1) cyclic-carbon-containing structures, (2) higher C/Si ratio, (3) multiple vinyl groups, as well as (4) the incorporation of porogen for developing low-k SiCxNy films as etch-stop/diffusion barrier (ES/DB) layer for copper interconnects in this study. SiCxNy films with k values between 3.0 and 3.5 were fabricated at T≦ 200 o C, and k~4.0-4.5 at 300-400 °C. Precursors with vinyl groups yielded SiCxNy films with low leakage, excellent optical transmittance and high mechanical strength due to the formation of cross-linked Si-(CH2)n-Si linkages.

Identiferoai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:20517
Date22 July 2016
CreatorsLeu, Jihperng, Tu, H.E., Chang, W.Y., Chang, C.Y., Chen, Y.C., Chen, W.C., Zhou, H.Y.
PublisherTechnische Universität Chemnitz
Source SetsHochschulschriftenserver (HSSS) der SLUB Dresden
LanguageEnglish
Detected LanguageEnglish
Typedoc-type:conferenceObject, info:eu-repo/semantics/conferenceObject, doc-type:Text
SourceAMC 2015 – Advanced Metallization Conference
Rightsinfo:eu-repo/semantics/openAccess
Relationurn:nbn:de:bsz:ch1-qucosa-206986, qucosa:20503

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