Substrate noise coupling analysis in 0.18um silicon germanium (SiGe) and silicon on insulator (SOI) processes /

Description

Thesis (M.S.)--Oregon State University, 2005. / Printout. Includes bibliographical references (leaves 53-54). Also available on the World Wide Web.

Links & Downloads

1. http://hdl.handle.net/1957/11551

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Additional Fields

Identifer	oai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/60745666
Date	January 1900
Creators	Pham, Hui En.
Source Sets	OCLC
Language	English
Detected Language	English