An economically reliable technique for the synthesis of silicon nanowire was developed using silicon chloride as source material. The 30-40 micron long nanowires were found to have diameters ranging from 40 – 100 nm. An amorphous oxide shell covered the nanowires, post-growth. Raman spectroscopy confirmed the composition of the shell to be silicon-dioxide. Photoluminescence measurements of the as-grown nanowires showed green emission, attributed to the presence of the oxide shell. Etching of the oxide shell was found to decrease the intensity of green emission. n-type doping of the silicon nanowires was achieved using antimony as the dopant. The maximum dopant concentration was achieved by post-growth diffusion. Intrinsic nanowire parameters were determined by implementation of the as-grown and antimony doped silicon nanowires in field effect transistor configuration.
| Identifer | oai:union.ndltd.org:unt.edu/info:ark/67531/metadc103364 |
| Date | 12 1900 |
| Creators | Nukala, Prathyusha |
| Contributors | Philipose, Usha, Neog, Arup, Guturu, Parthasarathy, Zhang, Hualiang |
| Publisher | University of North Texas |
| Source Sets | University of North Texas |
| Language | English |
| Detected Language | English |
| Type | Thesis or Dissertation |
| Format | Text |
| Rights | Public, Nukala, Prathyusha, Copyright, Copyright is held by the author, unless otherwise noted. All rights reserved. |
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