Approved for public release; distribution is unlimited / Exploring semiconductor lifetime, reliability and performance is a never-ending science for today's modern electronics. One significant problem that affects all of these areas is radiation-induced damage. Making calculations to determine how semiconductor devices will hold up in radiation-harsh environments has to be achieved in order to determine system lifetime once placed in their operational capacity. Today's high-technology investments in such areas as satellite design, medical advances, military and commercial hardware, demand thorough understanding in radiation damage. Modeling semiconductor devices with computer-based simulation will provide a cost and time savings over a repetitive design and testing sequence. This thesis models and simulates an industry standard solar cell and a light emitting diode (LED), using the SILVACO ATLASTM computer-based program. Using this software, these simulations are generated based on known radiation-induced defects on gallium arsenide (GaAs) semiconductive devices derived from Deep Level Transient Spectroscopy (DLTS) studies. A comparison is then made with another radiation-induced damage prediction method, known as Non-Ionizing Energy Loss (NIEL), to see if the SILVACO ATLASTM models can be used as an alternative. / Lieutenant, United States Navy
| Identifer | oai:union.ndltd.org:nps.edu/oai:calhoun.nps.edu:10945/1420 |
| Date | 09 1900 |
| Creators | Gladney, Dewey Clinton. |
| Contributors | Michael, Sherif, Weatherford, Todd R., Naval Postgraduate School (U.S.)., Electrical and Computer Engineering |
| Publisher | Monterey California. Naval Postgraduate School |
| Source Sets | Naval Postgraduate School |
| Detected Language | English |
| Type | Thesis |
| Format | xvi, 61 p. : ill. (some col.) ;, application/pdf |
| Rights | This publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States. |
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