Semiconductor Electroabosortion Modualtor (EAM) has become an important element in optical fiber communications because of its capability to integrate with other semiconductor devices, high-speed and low driving voltage. However, high optical insertion loss and low tolerance in optical power coupling are main general problems to be solved in order to get high electro-optical (EO) efficiency. Monolithically integrating EAM with optical spot-size converter (SSC) can lead to high-efficiency single-mode fiber coupling, but the price is on the complex fabrication methods. In this paper, based on previous work, the selective undercut etching active region (UEAR) and the whole wet-etching techniques are employed to fabricate the integration of laterally tapered SSC and EAM. Also, by applying the ion-implantation in SSC region, the reliable transfer efficiency and also high-speed performance are obtained based on the high resistance and low parasitic capacitance in SSC.
The active region containing 10 strain compensated multiple-quantum-wells (MQWs) sandwiched by n-InP (bottom) and p-InP (top) for the electroabsorption region of EAM and also the top region of lateral tapered SSC. The converted waveguide in SSC consists of alternating InGaAsP and InP layers. An HBr-base etching solution is first used to define the top p-cladding with the widths of from 6um to 8um. An H2O2-base solution is then utilized to selectively undercut-etch the MQWs from InP material. The active waveguide p-cladding in EAM is set as 8um. After defining EAM and SSC, the converted waveguide is fabricated by aligning the top SSC and then wet-etched. By using an e-beam evaporator, Ti/Pt/Au and Ni/AuGe/Ni/Au are deposited as p- and n-type metallization, respectively. PMGI is spun serving as the passivation, planarization and bridging. The microwave coplanar waveguide (CPW) line is finally defined by depositing Ti/Au for microwave load- and feed- lines and connecting EAM. The length of SSC is 350um.
The Spot-Size Converter monolithically integrated with Electroabsortion Modulator using whole wet-etching technique is demonstrated. ¡V12.5dB of fiber-to-fiber insertion loss and 10dB (TE) 10dB(TM) extinction ration in 1V(1570nm excitation) is obtained in this device. Using Fabry-Perot method, the average optical transfer loss in SSC is extracted to be 2dB, quite consistent with simulation results. By applying ion-implantation on SSC, the broadband EO performance 45GHz of ¡V3dB bandwidth is achieved for 100um long device due to the low capacitance and the high resistivity in SSC.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0711107-144055 |
| Date | 11 July 2007 |
| Creators | Huang, Cheng-Yeh |
| Contributors | Ann-Kuo Chu, Yi-Jen Chiu, Chao-Kuei Lee |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0711107-144055 |
| Rights | not_available, Copyright information available at source archive |
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