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Výkonové spínací tranzistory / Power Switching Transistors

In this thesis, prerequisities for a switching loss measurements are established as well as designing of DC-bus and the base/gate driver for the power transistors; followed by derivation of mathematical approximation of transistor conductivity gCE =iCuCE, circuit simulation using gCE as a transistor model and a discussion of measured waveforms.

Identiferoai:union.ndltd.org:nusl.cz/oai:invenio.nusl.cz:254485
Date January 2016
CreatorsMikláš, Ján
ContributorsProcházka, Petr, Patočka, Miroslav
PublisherVysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií
Source SetsCzech ETDs
LanguageCzech
Detected LanguageEnglish
Typeinfo:eu-repo/semantics/masterThesis
Rightsinfo:eu-repo/semantics/restrictedAccess

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