by Tsoi Hing Lun. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2002. / Includes bibliographical references (leaves 98-102). / Abstracts in English and Chinese. / Acknowledgement --- p.i / 摘要 --- p.ii / Abstract --- p.iii / Chapter Chapter 1 --- Introduction / Chapter 1.1 --- General review --- p.1 / Chapter 1.2 --- Our work --- p.4 / Chapter Chapter 2 --- Experimental setup and procedures / Chapter 2.1 --- Sample preparation --- p.6 / Chapter 2.1.1 --- ZnSe heterostructure --- p.6 / Chapter 2.1.2 --- Quantum dot --- p.7 / Chapter 2.2 --- Common aspects of Raman scattering --- p.8 / Chapter 2.3 --- General studies --- p.11 / Chapter 2.3.1 --- Excitation power density dependent studies --- p.11 / Chapter 2.3.2 --- Angular dependent studies --- p.12 / Chapter 2.3.3 --- Excitation energy dependent studies --- p.14 / Chapter 2.4 --- Peripheral measurements --- p.16 / Chapter 2.4.1 --- Spectral calibration --- p.16 / Chapter 2.4.2 --- Alignment and system stability checks --- p.18 / Chapter 2.5 --- The method of measuring the Raman scattering efficiency --- p.19 / Chapter Chapter 3 --- Band Bending at the interface of ZnSe/GaAs / Chapter 3.1 --- Results and discussions --- p.27 / Chapter Chapter 4 --- Characteristics of QD phonons / Chapter 4.1 --- Angular dependent studies --- p.38 / Chapter 4.2 --- Excitation energy dependent studies --- p.60 / Chapter 4.3 --- The nature of the QD phonons --- p.64 / Chapter 4.4 --- The measurement of the Raman scattering efficiency of QDs --- p.67 / Conclusions --- p.75 / Future work --- p.73 / Appendix1 --- p.79 / Appendix2 --- p.82 / Appendix3 --- p.86 / Appendix4 --- p.88 / Appendix5 --- p.95 / References --- p.93
| Identifer | oai:union.ndltd.org:cuhk.edu.hk/oai:cuhk-dr:cuhk_323843 |
| Date | January 2002 |
| Contributors | Tsoi, Hing Lun., Chinese University of Hong Kong Graduate School. Division of Physics. |
| Source Sets | The Chinese University of Hong Kong |
| Language | English, Chinese |
| Detected Language | English |
| Type | Text, bibliography |
| Format | print, iv, 102 leaves : ill. ; 30 cm. |
| Rights | Use of this resource is governed by the terms and conditions of the Creative Commons “Attribution-NonCommercial-NoDerivatives 4.0 International” License (http://creativecommons.org/licenses/by-nc-nd/4.0/) |
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