Return to search

The Study of Temperature Compensation with SiO2 Films on Proton-Exchanged LiNbO3 and LiTaO3 for Surface Acoustic Wave

In this study, proton-exchanged (PE) waveguides in Z-cut LiNbO3 and 36¢X-Y LiTaO3 have been fabricated using octanoic acid. The XRD analysis shows that the proton-exchange mechanism is different for LiNbO3 and LiTaO3 substrate, which results in a different variation of SAW velocity. For the temperature coefficient of frequency (TCF) and insertion loss (IL), the absolute values of both increase with the depth of proton-exchanged LiNbO3 and LiTaO3 substrates.
In addition, the rf magnetron sputtering method is adopted to deposit SiO2 thin films on LiNbO3 and LiTaO3 piezoelectric substrates. Then the interdigital transducers (IDTs) were fabricated on the bi-layer structure. The film thickness of SiO2 was varied in order to investigate its effect on SAW devices. From the experimental results, TCF of SAW filters increase with the increased thickness of SiO2 thin film.
At last, SiO2 thin films were deposited on proton-exchanged LiNbO3 and LiTaO3 substrates, respectively. From the experimental results for the SAW properties on the SiO2/PE-LiNbO3 and SiO2/PE-LiTaO3 structures, it reveals that the TCF of SAW filters increases with the increased thickness of SiO2 thin films. And we can conclude that SiO2 thin films can compensate the TCF of proton-exchanged LiNbO3 and LiTaO3

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0725103-142033
Date25 July 2003
CreatorsChung, Chung-Jen
ContributorsLong Wu, Yeong-Hen Wang, none, Chien-Chuan Cheng, Ying-Chung Chen
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0725103-142033
Rightsunrestricted, Copyright information available at source archive

Page generated in 0.0017 seconds