In recent years, there has been increasing demands for high dielectric materials to replace SiO2 for high-density dynamic random access memories with ultra large scale integration (ULSI). As the dimensions of the charge storage node decrease in high-density dynamic random access memories (DRAMs), TiO2 and BaTiO3 are very promising candidates for applications with exhibiting higher dielectric constant, high refractive index and high chemical stability. The growth of TiO2 and BaTiO3 thin films on various substrates i.e. (100) silicon¡B(100) GaAs¡B(100) InP and (100) MgO are studied by MOCVD using Ti(i-OC3H7)4, Ba(DPM)2, N2O and O2 as precursors. The growth was performed in a cold wall horizontal system in the temperature range of 280~750¢J. The growth rates and structure of TiO2 and BaTiO3 films are affected by the substrate temperature and reactor pressure, etc. The phase transition properties of TiO2 were studied via X-ray diffraction measurements. X-ray diffraction examination shows that phase transition of TiO2 films are at the same temperature of 450 oC on different substrates. Phase-pure rutile is obtained down to 450¢J on InP (100) and GaAs (100), while phase-pure anatase is obtained up to 450¢Jon MgO (100). The optical and electrical properties are associated with the film structures. TiO2 single phase films with rutile (110) orientation were successfully grown on InP (100) at 500¢J. In-plane epitaxial relationship of anatase TiO2 (100) // MgO (100) is present between 300¢J and 375¢J. In addition, the influences of substrate temperature and oxidizer on the structural and electrical properties of BaTiO3 films will be also studied. However, TiO2 and BaTiO3 films have columnar structures acted the paths of leakage current resulting low dielectric constant. We use thermal annealing to improve the quality of TiO2 with respect to leakage current density and dielectric constant. Dielectric constants of annealed TiO2 films were as high as 110.08. Leakage current density reduced to 5 ¡Ñ 10-5 A/cm2. In the future, to improve the crystal structure of the films is the goal in our study.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0706101-190822 |
| Date | 06 July 2001 |
| Creators | Hung, Yi-Min |
| Contributors | Kuo-Mei Chen, Ming-Kwei Lee, Jeng Gong, Jen-Sue Chen |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | English |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706101-190822 |
| Rights | not_available, Copyright information available at source archive |
Page generated in 0.0017 seconds