Electronic applications have expanded to encompass a variety of materials. In particular, allotropes of carbon interest researchers for their electronic applications. Knowledge of carbon allotropes and their applications has expanded significantly since the discovery of C60 Buckminsterfullerene in 1985, the discovery of multi- and single-walled carbon nanotubes in the early 1990s, and the isolation of graphene in 2004. Single-walled carbon nanotubes (SWNTs) have the potential to bring next-generation electronic devices to fruition. Such devices could be flexible, conformable, and inexpensive. SWNT-based electronics are promising for chemical and biological sensing applications, for example, where high carrier mobilities are unnecessary, and material conformity and inexpensive processing are significant advantages. Considerable progress has been made in separating semiconducting SWNTs from metallic SWNTs, enabling SWNT incorporation into semiconducting electronic technologies. Selective sorting of semiconducting SWNTs using π-conjugated polymers is an effective and efficient technique to enrich large quantities of ultra-pure semiconducting SWNTs. Following semiconducting enrichment, SWNTs can be incorporated into electronic devices.
This thesis focuses on the enrichment of semiconducting SWNTs via conjugated polymer extraction and incorporating the resulting polymer-SWNT dispersions into thin-film transistors (TFTs). Novel copolymers were investigated for their capacity to selectively sort and disperse large-diameter sc-SWNTs synthesized using the plasma torch technique. Absorption and Raman spectroscopy were employed to monitor the efficacy of the conjugated polymer extraction procedure. Following enrichment, the polymer-SWNT dispersions were incorporated into TFTs. The interaction between the conjugated polymer and the SWNT and the conjugated polymer and dielectric was an essential component of TFT optimization. Furthermore, the procedure of sorting and dispersing sc-SWNTs is investigated for its effect on TFT performance and was another component of TFT optimization. TFTs were electrically characterized in terms of carrier mobility, threshold voltage, hysteresis, and current on/off ratio. The film morphology of the SWNT TFTs was also investigated. Atomic force microscopy and Raman mapping were used to provide insight into the nanometre and micrometre scale film morphology, respectively.
| Identifer | oai:union.ndltd.org:uottawa.ca/oai:ruor.uottawa.ca:10393/44086 |
| Date | 22 September 2022 |
| Creators | Mirka, Brendan |
| Contributors | Lessard, Benoît |
| Publisher | Université d'Ottawa / University of Ottawa |
| Source Sets | Université d’Ottawa |
| Language | English |
| Detected Language | English |
| Type | Thesis |
| Format | application/pdf |
| Rights | CC0 1.0 Universal, http://creativecommons.org/publicdomain/zero/1.0/ |
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