Investigation of inversion layer mobility in N-channel mosfets with thin gate oxide /

Description

Thesis--M. Phil., University of Hong Kong, 1984.

Links & Downloads

1. http://sunzi.lib.hku.hk/hkuto/record.jsp?B12310700

Tags

Thin films Metal oxide semiconductors.

Additional Fields

Identifer	oai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/52023453
Date	January 1984
Creators	Chan, Tim-wah.
Publisher	[Hong Kong : University of Hong Kong],
Source Sets	OCLC
Language	English
Detected Language	English
Source	View the Table of Contents & Abstract.