Tight-binding potential combined with a simulated annealing method is used to study the generalized stacking fault structure and energy of gold. The potential is chosen to fit band structures and total energies from a set of first-principles calculations (Phys. Rev. B54, 4519 (1996)). It is found that the relaxed stacking fault energy (SFE) and anti-SFE are equal to 46 and 102 mJ/m², respectively, and in good agreement with the first principles calculations and experiment. In addition, the potential predicts that the c/a of hcp-like stacking fault structure in Au is slightly smaller than the ideal one. / Singapore-MIT Alliance (SMA)
Identifer | oai:union.ndltd.org:MIT/oai:dspace.mit.edu:1721.1/4005 |
Date | 01 1900 |
Creators | Cai, Jun, Wang, Jian-Sheng |
Source Sets | M.I.T. Theses and Dissertation |
Language | en_US |
Detected Language | English |
Type | Article |
Format | 188138 bytes, application/pdf |
Relation | High Performance Computation for Engineered Systems (HPCES); |
Page generated in 0.002 seconds