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<p>By means of this dissertation we bring to light that FETs (that are either Si or 2D-TMD based) when coupled with piezoelectric or ferroelectric materials can offer attractive solutions such as (i) technology scaling, (ii) non-volatile memory functionality and (iii) beyond-von-Neumann computing paradigms that address the limitations of current architectures. Our efforts encompass the domains of steep switching devices, non-volatile memories, computation-in-memory and non-Boolean computing, wherein we explore devices embedded with piezoelectric (strain-based) and ferroelectric (polarization-based) properties and propose novel circuits based on them, while focusing on understanding their device-circuit interactions and system implications.</p>
| Identifer | oai:union.ndltd.org:purdue.edu/oai:figshare.com:article/20063795 |
| Date | 14 June 2022 |
| Creators | Niharika Thakuria (8320311) |
| Source Sets | Purdue University |
| Detected Language | English |
| Type | Text, Thesis |
| Rights | CC BY 4.0 |
| Relation | https://figshare.com/articles/thesis/DEVICE_CIRCUIT_CO-DESIGN_UTILIZING_PIEZOELECTRIC_AND_FERROELECTRIC_MATERIALS/20063795 |
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