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Study on epitaxial growth of Ni on polycrystalline Cu by electrodeposition

The present study aims at clarifying the effects of processing parameters and substrate orientation on the epitaxial growth of Ni on polycrystalline Cu by electrodeposition from a sulfamate solution. The deposits were analyzed by scanning electron microscopy (SEM), electron backscatter diffraction (EBSD), auger electron spectroscopy (AES) and transmission electron microscopy (TEM).
Two morphologies: rough and smooth, of the substrate surface were introduced by electropolishing. Auger electron spectroscopy showed that Ni was deposited on both areas without preference. However, the deposition rate for the rough area was slightly higher at a low current density of 0.01 A/dm2. At higher current densities, both areas possessed the same rate of deposition.
In-plane TEM results demonstrated that Ni deposited on Cu epitaxially regardless the orientation of the Cu grains, electrolyte temperature and current density. EBSD analysis indicated that the Ni epilayer with an orientation of <001>//ND grew epitaxially to as thick as 12 £gm, whereas randomly oriented Ni nucleated on the epilayer having orientations of <011>//ND or <-111>//ND on prolonging deposition at current of 10 A/dm2. In other words, the epitaxial growth of Ni on Cu cannot be sustained to a thickness of hundreds of micrometers without a <001>//ND orientation.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0906111-121106
Date06 September 2011
CreatorsLiu, Ying-chen
ContributorsDer-shin Gan, Liu-wen Chang, Pa-wei Kao
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0906111-121106
Rightsuser_define, Copyright information available at source archive

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