This study is focuses on the resistance switching physical mechanism in hafnium oxide (HfO2) of resistive random access memory (RRAM). HfO2 was taken as the resistance switching layer because HfO2 is extremely compatible with the prevalent complementary metal oxide semiconductor (CMOS) process. The detail physical mechanism is studied by the stable RRAM device (Ti/HfO2/TiN), which is offered from Industrial Technology Research Institute (ITRI). In this study, the resistance switching property of two different forming conductions are compared, including DC sweeping forming and AC pulse forming. In general, forming is a pivotal process in resistance
random access memory (RRAM) to activate the resistance switching behavior. However, over forming would lead to device damage. The overshoot current has been considered as a degradation reason during the forming process. The circuit design is used to obtain the overshoot effect of DC sweeping forming by oscilloscope and semiconductor parameter analyzer system. The quantity of charge through the switching layer has been proven as the key element in the formation of the conduction path. Ultra-fast pulse
forming can form a discontinuous conduction path to reduce the operation power.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0714112-162455 |
| Date | 14 July 2012 |
| Creators | Lou, Jyun-Hao |
| Contributors | Ann-Kuo Chu, Zhen-Ming Wu, Simon M. Sze, Ting-Chang Chang, Dershin Gan |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | English |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0714112-162455 |
| Rights | user_define, Copyright information available at source archive |
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